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1. Fabrication of amorphous Silicon Solar Cells:

(A. K. Barua, S. Ray, P. Chaudhuri)

Work in this area started at IACS in 1978 with a small project funded by Dept. of Sc. & Tech. (DST) . Govt. of India. Since then it has received sustained support from DNES / MNES, UNDP and DST. IACS has set up in 1986 the Energy Research Unit for doing concentrated work on advanced solar photovoltaic technologies. This was also a part of the Science and Technology project for the development of a-Si solar cell technology implemented in the Mission mode during Seventh Plan Period.

As a result of these inputs and intensive work on the development of solar cells Energy Research Unit have reached the following status

    i) Fabrication technology for single junction a-Si solar cells has been developed yielding efficiency > 11.0% with light induced degradation of 22%.

    ii) Double junction small area cells with initial efficiency ~ 11% have been fabricated with light induced degradation ~15%. Triple junction cell with initial efficiency 10.5% has been fabricated.

    iii) Large area (77 cm2) double junction cells with initial efficiency 7.4% have been fabricated without laser scribing. Connecting 9 such cells in series double junction module with active area 700 cm2 has been fabricated with stabilized efficiency 6.2%.

    iv) The team played a key role in commissioning process development and operation of BHEL / MNES a-Si plant set up at Gwalpahari, Haryana.

2. Development of a-Si and related Materials
(A. K. Barua, S. Ray, P. Chaudhuri, D. Das)

State-of-the-art and new types of materials have been developed for applications in solar cells. Different deposition techniques for the preparation of device quality thin films have been developed.

A. The materials developed by PECVD technique
    i) Undoped and doped amorphous silicon films (1.7-1.8 eV)

    (a-Si:H, n-type Si:H, p-type Si:H, a-SiF:H)

    ii) High band gap alloys of a-Si:H, Silicon Carbide and Silicon Oxide

    (1.8-2.2 eV)

    (a-SiC:H, p-type a-SiC:H, a-SiO:H, n-type a-SiOx:H, p-type a:SiOx:H, a-SiC:F:H etc.)

    iii) Low band gap alloys of a-Si:H specially amorphous silicon germanium (1.4 to 1.65eV). Novel material e.g., low band gap a-Si:H using helium as diluent of silane gas

    iv) Microcrystalline Si thin film and its alloys ( µ c-Si:H, n-type & p-type µ c-Si, µ c-SiF:H, µ c-SiC:H, µ c-SiC:F:H, n and p-type µ c-SiC:F:H and µc-SiC:H, p-type and undoped µ c-SiOx:H ). µ c p-type SiC:H films are also developed by very high frequency PECVD technique.

    v) Nanocrystalline silicon films have been developed under an unexplored region of parameter space of Rf PECVD. The film is photosensitive. On the other hand light induced degradation of its electronic properties is much less compared to conventional a-Si:H.

B. Materials developed by Photo-CVD
    i) Amorphous silicon and its alloys like amorphous and microcrystalline silicon carbide, silicon-germanium and silicon oxide films have been developed by Hg-sensitized photo-CVD technique which is ion-damage free low energy process of depositing thin films.

    ii) Diamond like carbon films have been developed by photo-CVD technique decomposing silane and ethylene gas mixture by ultraviolet light.

3.Development of polycrystalline silicon films for application in solar cells

    (S. Ray)

Thin polycrystalline / microcrystalline Si solar cells are promising candidates for meeting requirements of high efficiency and stability of c-Si and low cost of a-Si technology. Undoped and n-type polycrystalline Si thin films have been deposited by PECVD at 2000C using silicon tetrafluoride as source gas. Poly-Si films have also been developed by Solid Phase Crystallization of amorphous silicon films.
4.Transparent conducting oxide

(A. K. Barua, D. Das, S. Ray)

Transparent conducting oxides e.g., Indium tin oxide (ITO), Tin oxide (SnO2) and Zinc oxide (ZnO) films with high conductivity and transmittance have been prepared by magnetron sputtering and electron beam evaporation techniques.

Work has been initiated for the development of conducting transparent coating on the canopy / wind shield of light combat aircraft. This project is being funded by Aeronautical Development Agency (DRDO) and other partners are Institute of Robotics and Intelligent Systems, Bangalore and Hind High Vacuum Co., Bangalore. 

5. Setting up of a plasma diagnostic facility

(P. Chaudhuri)

Optical emission spectroscopic (OES) arrangement for plasma diagnostics has been incorporated in a PECVD system to study low temperature processing plasma. A quadruple mass spectrometer is also been installed and a Langmuir probe arrangement has been designed which will be in operation soon. The objective is to improve the material properties and enhance solar cell performance through an accurate knowledge of the plasma.

6. Computer modeling of a-Si based semiconductor devices
(Parsathi Chatterjee)

An integrated electrical - optical model for stimulating and examining ways of optimizing the performance of semiconductor devices has been set up. This model has been applied to simulate single and double junction solar cells as well as to a-si based n-i-p-i-n structures.

7.Participation in an Industrial Reference Cell Calibration programme
(A. K. Barua and P. Chaudhuri)

An international programme has been conducted since 1993 (known as PEP'93) by the National Renewable Energy Laboratory, USA for calibration of reference solar cells and measurement technique of newer technology cells under this programme. This cells were circulated in two batches among standardization laboratories of several countries of which ERU was a participant. 

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