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of amorphous Silicon Solar Cells:
(A. K. Barua, S. Ray, P. Chaudhuri)
Work in this area started at IACS in 1978 with a
small project funded by Dept. of Sc. & Tech. (DST) . Govt. of India. Since
then it has received sustained support from DNES / MNES, UNDP and DST. IACS
has set up in 1986 the Energy Research Unit for doing concentrated work on
advanced solar photovoltaic technologies. This was also a part of the
Science and Technology project for the development of a-Si solar cell
technology implemented in the Mission mode during Seventh Plan Period.
As a result of these inputs and intensive work
on the development of solar cells Energy Research Unit have reached the
i) Fabrication technology for single junction a-Si
solar cells has been developed yielding efficiency > 11.0% with light
induced degradation of 22%.
of a-Si and related Materials
junction small area cells with initial efficiency ~ 11% have been fabricated
with light induced degradation ~15%. Triple junction cell with initial
efficiency 10.5% has been fabricated.
iii) Large area (77 cm2) double junction cells
with initial efficiency 7.4% have been fabricated without laser scribing.
Connecting 9 such cells in series double junction module with active area
700 cm2 has been fabricated with stabilized efficiency 6.2%.
iv) The team played a key role
in commissioning process development and operation of BHEL / MNES a-Si plant
set up at Gwalpahari, Haryana.
(A. K. Barua, S. Ray, P. Chaudhuri, D.
A. The materials developed by PECVD
and new types of materials have been developed for applications in solar
cells. Different deposition techniques for the preparation of device quality
thin films have been developed.
i) Undoped and doped amorphous silicon films
B. Materials developed by Photo-CVD
(a-Si:H, n-type Si:H, p-type
ii) High band gap alloys of a-Si:H, Silicon
Carbide and Silicon Oxide
(a-SiC:H, p-type a-SiC:H, a-SiO:H, n-type a-SiOx:H,
p-type a:SiOx:H, a-SiC:F:H etc.)
iii) Low band gap alloys of a-Si:H specially
amorphous silicon germanium (1.4 to 1.65eV). Novel material e.g., low band
gap a-Si:H using helium as diluent of silane gas
iv) Microcrystalline Si thin film and its alloys
( µ c-Si:H,
n-type & p-type µ c-Si, µ c-SiF:H, µ c-SiC:H, µ c-SiC:F:H,
n and p-type µ c-SiC:F:H
p-type and undoped µ c-SiOx:H
). µ c
p-type SiC:H films are also developed by very high frequency PECVD
v) Nanocrystalline silicon films have been
developed under an unexplored region of parameter space of Rf PECVD. The
film is photosensitive. On the other hand light induced degradation of its
electronic properties is much less compared to conventional a-Si:H.
i) Amorphous silicon and its alloys like amorphous
and microcrystalline silicon carbide, silicon-germanium and silicon oxide
films have been developed by Hg-sensitized photo-CVD technique which is
ion-damage free low energy process of depositing thin films.
polycrystalline silicon films for application in solar cells
ii) Diamond like carbon films have
been developed by photo-CVD technique decomposing silane and ethylene gas
mixture by ultraviolet light.
Thin polycrystalline /
microcrystalline Si solar cells are promising candidates for meeting
requirements of high efficiency and stability of c-Si and low cost of a-Si
technology. Undoped and n-type polycrystalline Si thin films have been
deposited by PECVD at 2000C using silicon tetrafluoride as source gas.
Poly-Si films have also been developed by Solid Phase Crystallization of
amorphous silicon films.
5. Setting up of a
plasma diagnostic facility
(A. K. Barua, D. Das, S. Ray)
Transparent conducting oxides e.g., Indium tin
oxide (ITO), Tin oxide (SnO2) and Zinc oxide (ZnO) films with high
conductivity and transmittance have been prepared by magnetron sputtering
and electron beam evaporation techniques.
Work has been initiated for the development of
conducting transparent coating on the canopy / wind shield of light combat
aircraft. This project is being funded by Aeronautical Development Agency (DRDO)
and other partners are Institute of Robotics and Intelligent Systems,
Bangalore and Hind High Vacuum Co., Bangalore.
6. Computer modeling
of a-Si based semiconductor devices
Optical emission spectroscopic (OES)
arrangement for plasma diagnostics has been incorporated in a PECVD system
to study low temperature processing plasma. A quadruple mass spectrometer is
also been installed and a Langmuir probe arrangement has been designed which
will be in operation soon. The objective is to improve the material
properties and enhance solar cell performance through an accurate knowledge
of the plasma.
an Industrial Reference Cell Calibration programme
An integrated electrical - optical
model for stimulating and examining ways of optimizing the performance of
semiconductor devices has been set up. This model has been applied to
simulate single and double junction solar cells as well as to a-si based n-i-p-i-n
(A. K. Barua and P. Chaudhuri)
An international programme has been conducted since
1993 (known as PEP'93) by the National Renewable Energy Laboratory, USA for
calibration of reference solar cells and measurement technique of newer
technology cells under this programme. This cells were circulated in two
batches among standardization laboratories of several countries of which ERU
was a participant.
Collections in this community
Presented paper at the conference/seminar of the Energy Research Unit Department
Thesis submitted by the scholars of the Energy Resource Unit Department
Article accepted in the Journal and published
Published items other than the conference paper, journal article and thesis